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Proceedings Paper

Si selective epitaxial growth technology using UHV-CVD and its application to LSI fabrication
Author(s): Seiichi Shishiguchi; Tomoko Yasunaga; Tohru Aoyama; T. Tatsumi; Shuichi Saito
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Paper Abstract

This paper describes Si or SiGe selective epitaxial growth (SEG) technology for the application to LSI fabrication. SEG has become one of the promising technologies, because this process realizes the self-aligned and the low-temperature in- situ doping process. Several advanced device structures have been proposed utilizing the SEG process advantages. However, there have been left several problems to be resolved in order to introduce this advanced process into the LSI fabrication. Wafer surfaces can not escape from the damage or contamination through the practical LSI fabrication process. The facet control or the fillings in the complex device structures are required. Several novel techniques of the surface treatment and the SEG conditions are introduced to overcome these problems. Some successful examples of SEG application are demonstrated to the advanced device structures, such as elevated S/Ds in MOS-FETs, contact fillings in DRAMs, and SiGe epi-base formation in high speed bipolar transistors, by an ultra-high vacuum chemical vapor deposition (UHV-CVD) system. For realizing future high density and high performance devices, which will require increasingly complex fabrication process, SEG will become one of the break-through technologies to ensure simpler processing.

Paper Details

Date Published: 27 August 1997
PDF: 12 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284582
Show Author Affiliations
Seiichi Shishiguchi, NEC Corp. (Japan)
Tomoko Yasunaga, NEC Corp. (Japan)
Tohru Aoyama, NEC Corp. (Japan)
T. Tatsumi, NEC Corp. (Japan)
Shuichi Saito, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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