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Proceedings Paper

Thin-film integration for nanoscale and high-frequency electronics on Si
Author(s): Joy Laskar; Nan Marie Jokerst; N. Evers; C. Chun
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Paper Abstract

The continued emergence of wireless applications as perhaps the most financially significant market in recent years, wireless technology has become a global core competency. The demand for increasingly higher rates of data transmission, low-power operation and high frequency operation will eventually require integration of nanoscale electronics into available silicon technologies. A broad application base is expected for co-integrated resonant tunneling/CMOS technology (termed QMOS for quantum metal oxide semiconductor) because of the expected factor of 5 to 10 increase in functional density and speed when compared to conventional all-CMOS high speed circuit approaches. These circuits are realized by integrating compound semiconductor resonant tunneling diodes and three terminal high frequency components with conventional CMOS circuitry through the use of thin-film integration processes. The focus of this work is to develop reliable, densely packed nanoelectronic interfaces to bring higher functionality to Si systems. We combine: (1) high performance, resonant tunneling electronics; (2) high frequency, wireless electronics; and (3) conventional CMOS electronics into a single wafer level integrated system.

Paper Details

Date Published: 27 August 1997
PDF: 9 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284581
Show Author Affiliations
Joy Laskar, Georgia Institute of Technology (United States)
Nan Marie Jokerst, Georgia Institute of Technology (United States)
N. Evers, Georgia Institute of Technology (United States)
C. Chun, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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