Share Email Print
cover

Proceedings Paper

Potential of rf Si-MOS LSI technology
Author(s): Akira Matsuzawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper reviews and discusses a potential of Si-MOS rf technology, focusing on the fundamental rf characteristics, such as f(tau ), fmax, noise, and linearity, also identical rf circuits, such as low noise amplifier, mixer, and oscillator.

Paper Details

Date Published: 27 August 1997
PDF: 9 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284580
Show Author Affiliations
Akira Matsuzawa, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

© SPIE. Terms of Use
Back to Top