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Proceedings Paper

Quasi-breakdowns in ultrathin dielectrics
Author(s): Byoung Woon Min; Dim-Lee Kwong
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Paper Abstract

In this paper, the quasi-breakdown is demonstrated to be a dominant failure mechanism in ultra-thin dielectrics with thicknesses less than 50 angstrom and should be considered as a reliability issue to avoid overestimation of dielectric breakdown. Under high stress current density (-Vg), the charge to catastrophic breakdown decreases with decreasing the oxide thickness because of dielectric breakdown in the structural transition layer existing SiO2/Si interface. But the Qbd rapidly increases again with decreasing the oxide thickness below 50 angstroms under low stress current density due to the difficulty in building up electric field to cause catastrophic breakdown through the localized conduction path induced by the quasi-breakdown prior to catastrophic breakdown. The quasi-breakdown was suppressed in NO-annealed oxide.

Paper Details

Date Published: 27 August 1997
PDF: 7 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284579
Show Author Affiliations
Byoung Woon Min, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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