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Proceedings Paper

Buried double p-n junction structure using a CMOS process for wavelength detection
Author(s): Guo Neng Lu; Mohamed Ben Chouikha; Mohamed Sedjil; Gerard Sou; George Alquie; Serge Rigo
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Paper Abstract

Buried double p-n junction (BDJ) structure designed and fabricated in a standard CMOS process is presented. Under reverse-biasing conditions, it provides two measurable photo- generated junction currents I1 and I2, which have a linear dependence on the incident photon flux. Over the visible range, the ratio I2/I1 is a monotone- increasing function of the wavelength, which can serve as a reference curve for wavelength determination. The reference curve r((lambda) ) can be obtained by measurement or by calculation. A physically-based model is suggested for the simulation of photocurrents and the computation of the curve r((lambda) ). Two application examples of the BDJ detector are presented. For the development of microspectrophotometry, replacing photodiodes by BDJ detectors offers a solution to problems of wavelength calibration. In the case of colorimetric pH measurement, the BDJ detector is used to detect spectral changes of absorption.

Paper Details

Date Published: 2 September 1997
PDF: 10 pages
Proc. SPIE 3226, Microelectronic Structures and MEMS for Optical Processing III, (2 September 1997); doi: 10.1117/12.284570
Show Author Affiliations
Guo Neng Lu, Univ. de Paris VI--Pierre et Marie Curie (France)
Mohamed Ben Chouikha, Univ. de Paris VI--Pierre et Marie Curie (France)
Mohamed Sedjil, Univ. de Paris VI--Pierre et Marie Curie (France)
Gerard Sou, Univ. de Paris VI--Pierre et Marie Curie (France)
George Alquie, Univ. de Paris VI--Pierre et Marie Curie (France)
Serge Rigo, Univ. de Paris VI--Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 3226:
Microelectronic Structures and MEMS for Optical Processing III
M. Edward Motamedi; Hans Peter Herzig, Editor(s)

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