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Proceedings Paper

Tristimulus color-sensitive photodetector in a BiCMOS technology
Author(s): Mohamed Ben Chouikha; Guo Neng Lu; Mohamed Sedjil; Gerard Sou; George Alquie
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Paper Abstract

A tristimulus color sensitive photo-detector consisting of three buried p-n junctions, implemented in a BiCMOS technology is presented. The three buried junctions give three band-pass- like spectral responses, which peak respectively in the blue, green and red areas. Simulated results obtained with a 1-D analytic model fit well the experimental curves obtained by measuring the sensing arrays in the test chip, designed and fabricated in a 1.2 micrometer BiCMOS process. The colorimetric characterization of the device is performed. A mean color difference of 2.15 is obtained.

Paper Details

Date Published: 2 September 1997
PDF: 9 pages
Proc. SPIE 3226, Microelectronic Structures and MEMS for Optical Processing III, (2 September 1997); doi: 10.1117/12.284567
Show Author Affiliations
Mohamed Ben Chouikha, Univ. de Paris VI--Pierre et Marie Curie (France)
Guo Neng Lu, Univ. de Paris VI--Pierre et Marie Curie (France)
Mohamed Sedjil, Univ. de Paris VI--Pierre et Marie Curie (France)
Gerard Sou, Univ. de Paris VI--Pierre et Marie Curie (France)
George Alquie, Univ. de Paris VI--Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 3226:
Microelectronic Structures and MEMS for Optical Processing III
M. Edward Motamedi; Hans Peter Herzig, Editor(s)

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