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Proceedings Paper

Pressure sensors based on the metal-semiconductor mesa structures
Author(s): Shamil D. Kurmashev; Andrey A. Gradoboev; Alexandr N. Sofronkov; Andjey Gavdzick
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Paper Abstract

Results of investigations in the field of scientific problems are presented and prospects for creation of new pressure sensors, based on the pressure-sensitivity effect in metal-semiconductor mesa-structures, are analyzed in this paper. Principle characteristics of such devices - motion sensors, vibrometers, deflectometers, elastic wave meters are discussed.

Paper Details

Date Published: 5 September 1997
PDF: 2 pages
Proc. SPIE 3224, Micromachined Devices and Components III, (5 September 1997); doi: 10.1117/12.284527
Show Author Affiliations
Shamil D. Kurmashev, Odessa State Univ. (Ukraine)
Andrey A. Gradoboev, Odessa State Univ. (Ukraine)
Alexandr N. Sofronkov, Odessa State Univ. (Ukraine)
Andjey Gavdzick, Opole State Univ. (Poland)

Published in SPIE Proceedings Vol. 3224:
Micromachined Devices and Components III
Kevin H. Chau; Patrick J. French, Editor(s)

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