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Proceedings Paper

Anneal treatment studies of heavily boron-doped silicon
Author(s): Denise M. Bruce
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Paper Abstract

An experimental study was performed to investigate the effects of high temperature anneal treatments on the microstructure and curling behavior of heavily boron-doped silicon structures. Cantilever structures were created from p++ boron-diffused silicon wafers. The post-diffusion anneal treatment temperature was varied while the anneal time remained constant. The micromechanical cantilevers were analyzed for curl as a function of the anneal temperature using an optical profiler. Bulk sections from the wafers were analyzed to obtain boron concentration, distribution of lattice constant, and dislocation distribution. Results of the curl measurements revealed that all non-annealed cantilever structures were curled in one direction, and those annealed for 90 minutes above 1100 degrees Celsius were all curled in the other direction, with an apparent transition temperature of about 1050 degrees Celsius. Secondary ion mass spectroscopy (SIMS) analysis confirmed that boron concentration becomes more uniform through the wafer thickness with increasing anneal temperature. X-ray diffraction revealed that the magnitude of the smallest lattice constant present in a wafer increases with increasing anneal temperature, which may allow a compressive stress to develop. Transmission electron microscope (TEM) observations showed that dislocations move during the anneal process to relieve stresses.

Paper Details

Date Published: 5 September 1997
PDF: 6 pages
Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); doi: 10.1117/12.284490
Show Author Affiliations
Denise M. Bruce, U.S. Air Force Academy (United States)


Published in SPIE Proceedings Vol. 3223:
Micromachining and Microfabrication Process Technology III
Shih-Chia Chang; Stella W. Pang, Editor(s)

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