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Proceedings Paper

IC-compatible fabrication of through-wafer conductive vias
Author(s): Jean Gobet; Jean-Phillipe Thiebaud; Francois Crevoisier; Jean-Marc Moret
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Paper Abstract

A novel process for the fabrication of high aspect-ratio high density through-wafer conductive vias is presented. This IC compatible post-processing technology is based on the use of silicon fast anisotropic plasma etching. It overcomes the inherent size or process limitations of previously known methods based on anisotropic chemical etching or laser drilling. The simple process (4 photolithographic steps) includes: (1) Realization of through-wafer holes by fast silicon etching in a low temperature inductively coupled plasma. (2) Insulation of the through-hole walls by room temperature chemical vapor deposition of an organic polymer. (3) Metallization of the through-hole walls by sputtering and evaporation. (4) Insulator dry etching and metal wet etching with a dry film photoresist mask that provides the necessary tenting capability over the through-holes. The process feasibility has been successfully demonstrated with a test design integrated on 100 mm 380 micrometer thick silicon wafers. The through-wafer vias, with a pitch of 350 micrometer and an average density of 100 (DOT) cm-2, have an electrical resistance of 2 (Omega) and a parasitic capacitance lower than 1 pF.

Paper Details

Date Published: 5 September 1997
PDF: 9 pages
Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); doi: 10.1117/12.284487
Show Author Affiliations
Jean Gobet, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)
Jean-Phillipe Thiebaud, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)
Francois Crevoisier, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)
Jean-Marc Moret, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)


Published in SPIE Proceedings Vol. 3223:
Micromachining and Microfabrication Process Technology III
Shih-Chia Chang; Stella W. Pang, Editor(s)

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