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Proceedings Paper

10-um thin GaAs membrane manufactured by nonselective etching
Author(s): Alexandru Mueller; Ioana Petrini; Viorel Avramescu; Sergiu A. Iordanescu; Romolo Marcelli; Vittorio Foglietti; M. Dragoman
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Paper Abstract

The aim of this paper is to determine an optimum nonselective etching solution in order to manufacture an as thin as possible, uniform and high quality GaAs membrane. Three different etching systems in various proportions of the components were analyzed. A high quality 10 micrometer thin GaAs membrane was obtained using the [1(H3PO4)]: [1(CH3OH)]: [3(H2O2)] etching solution. The micromachined GaAs membranes are manufactured to be used as support for microwave circuits as well as in high temperature sensor applications.

Paper Details

Date Published: 5 September 1997
PDF: 9 pages
Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); doi: 10.1117/12.284482
Show Author Affiliations
Alexandru Mueller, National Institute for Research and Development of Microtechnology (Romania)
Ioana Petrini, National Institute for Research and Development of Microtechnology (Romania)
Viorel Avramescu, National Institute for Research and Development of Microtechnology (Romania)
Sergiu A. Iordanescu, National Institute for Research and Development of Microtechnology (Romania)
Romolo Marcelli, Istituto di Elettronica dello Stato Solido (Italy)
Vittorio Foglietti, Istituto di Elettronica dello Stato Solido (Italy)
M. Dragoman, National Institute for Research and Development of Microtechnology (Romania)


Published in SPIE Proceedings Vol. 3223:
Micromachining and Microfabrication Process Technology III
Shih-Chia Chang; Stella W. Pang, Editor(s)

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