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Proceedings Paper

Single-sided multilevel structure for silicon pressure transducers by masked-maskless etching technology
Author(s): Heng Yang; Jianjun Ren; Minhang Bao; Shaoqun Shen
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Paper Abstract

A novel singled-sided multilevel island-beam-diaphragm structure has been designed and fabricated for an extremely high sensitivity pressure transducers by using a novel anisotropic etching technology called masked-maskless anisotropic etching technology. The structure consists of two small islands for overrange protection, two shallow masses for stress concentration, three thin beams on a deep-etched thin diaphragm for piezoresistors location. A prototype pressure transducer of 400 pa operation range and 0.6% nonlinearity has been tested.

Paper Details

Date Published: 5 September 1997
PDF: 4 pages
Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); doi: 10.1117/12.284479
Show Author Affiliations
Heng Yang, Fudan Univ. (China)
Jianjun Ren, Fudan Univ. (China)
Minhang Bao, Fudan Univ. (China)
Shaoqun Shen, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 3223:
Micromachining and Microfabrication Process Technology III
Shih-Chia Chang; Stella W. Pang, Editor(s)

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