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Proceedings Paper

Plasma pinchlamp surface preparation
Author(s): John F. Asmus
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Paper Abstract

A high-pressure laser-guided gas-embedded plasma pinchlamp is described for the generation of intense UV radiation. It has been configured to optimize energy transfer from the storage PFN. The output energy peaks within the spectral range 150 - 250 nm with a pulsed power of 20 MW at 10 Hz. The device employs a working gas of argon at 3 AMAGAT and has a pulsewidth of 20 microseconds. The results of exploratory surface modification experiments with the pinchlamp are reported. These include the destruction of chemical warfare agent simulants, asbestos, petroleum, and insecticides on surfaces as well as semiconductor annealing. In addition it was determined that various aircraft coatings are able to be removed from aluminum and composite substrates. These coatings included primers, top coats, and anti-erosion materials. This pinchlamp technology potentially fills a performance gap in the hard ultraviolet between flashlamps and lasers. On the one hand it offers a peak power and brightness comparable to parameters customarily associated with laser technology. On the other hand it possesses the efficiency, simplicity, and scalability often encountered with conventional flashlamp systems.

Paper Details

Date Published: 26 September 1997
PDF: 8 pages
Proc. SPIE 3140, Photometric Engineering of Sources and Systems, (26 September 1997); doi: 10.1117/12.284088
Show Author Affiliations
John F. Asmus, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 3140:
Photometric Engineering of Sources and Systems
Angelo V. Arecchi, Editor(s)

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