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Proceedings Paper

Development of a high-power x-band relativistic two-stream amplifier
Author(s): Chiping Chen; Jose E. Velazco
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Paper Abstract

The operating principles and basic design equations of the relativistic two-stream amplifier (RTSA) are presented. A dispersion relation is obtained for two relativistic electron beams interacting with a slow wave structure for RF power extraction. A conceptual design is presented for the development of a high-power X-band RTSA.

Paper Details

Date Published: 3 October 1997
PDF: 4 pages
Proc. SPIE 3158, Intense Microwave Pulses V, (3 October 1997); doi: 10.1117/12.284022
Show Author Affiliations
Chiping Chen, Massachusetts Institute of Technology (United States)
Jose E. Velazco, Microwave Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3158:
Intense Microwave Pulses V
Howard E. Brandt, Editor(s)

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