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Proceedings Paper

Single-pulse high-power microwave detector
Author(s): Xiaolong Liu; Guozhi Liu; Zhengfu Li; Shi Qiu
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Paper Abstract

A single-pulse high power microwave detector was described in this paper, which was developed based on hot carriers effect in P-type semiconductors for measuring the power of high power microwave. The detector consists of P-type silicon as sensor unit and standard wave guide and is characterized by its capability of undertaking much higher power of microwave (about 6 orders higher than ordinary crystal detectors), fast response (response time is less than 1.7 ns), good linearity and large amplitude of output pulse, and can offer 3.0 GHz to 20 GHz performance with various waveguide. Also included in this paper are the calibration procedure of the detectors and results. The detector can be proved to be an efficient technical approach to solve the problems in measurements of high power microwaves.

Paper Details

Date Published: 3 October 1997
PDF: 5 pages
Proc. SPIE 3158, Intense Microwave Pulses V, (3 October 1997); doi: 10.1117/12.284017
Show Author Affiliations
Xiaolong Liu, Northwest Institute of Nuclear Technology (China)
Guozhi Liu, Northwest Institute of Nuclear Technology (China)
Zhengfu Li, Northwest Institute of Nuclear Technology (China)
Shi Qiu, Northwest Institute of Nuclear Technology (China)


Published in SPIE Proceedings Vol. 3158:
Intense Microwave Pulses V
Howard E. Brandt, Editor(s)

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