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Proceedings Paper

New performance of n-type InSb photoconductive detectors
Author(s): Cristiana E. A. Grigorescu; Stefan A. Manea; Ioana Pintilie; Lucian Pintilie; Mihail F. Lazarescu; Teodor Necsoiu
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Paper Abstract

This paper reports on the new performance obtained for n-type InSb photoconductive element detectors, made of bulk crystals. It is taken into account the important drop of the electric conductivity, by one magnitude order over the temperature range 77 K - 90 K, that forced us to optimize the heat transfer among the elements of the device. The maximum value obtained for the spectral detectivity is 4 by 1012 cmHz1/2W-1, at lambda equals 4.9 micrometer, for a field of view of 60 degrees. The calculations show that the device is limited by the generation-recombination noise.

Paper Details

Date Published: 22 September 1997
PDF: 6 pages
Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); doi: 10.1117/12.281385
Show Author Affiliations
Cristiana E. A. Grigorescu, Institute of Optoelectronics (Romania)
Stefan A. Manea, Institute of Physics and Technology of Materials (Romania)
Ioana Pintilie, Institute of Physics and Technology of Materials (Romania)
Lucian Pintilie, Institute of Physics and Technology of Materials (Romania)
Mihail F. Lazarescu, Institute of Physics and Technology of Materials (Romania)
Teodor Necsoiu, Institute of Optoelectronics (Romania)


Published in SPIE Proceedings Vol. 3110:
10th Meeting on Optical Engineering in Israel
Itzhak Shladov; Stanley R. Rotman, Editor(s)

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