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Proceedings Paper

Properties of light emission from silicon junctions
Author(s): Herzl Aharoni; Monuko du Plessis; Lukas Willem Snyman
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Paper Abstract

Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (IR) are determined, as well as the rate of change dLi/d(lambda) and dLi/dIR as a function of (lambda) and IR. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by IR.

Paper Details

Date Published: 22 September 1997
PDF: 7 pages
Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); doi: 10.1117/12.281338
Show Author Affiliations
Herzl Aharoni, Ben-Gurion Univ. of the Negev (Israel)
Monuko du Plessis, Univ. of Pretoria (South Africa)
Lukas Willem Snyman, Univ. of Pretoria (South Africa)


Published in SPIE Proceedings Vol. 3110:
10th Meeting on Optical Engineering in Israel
Itzhak Shladov; Stanley R. Rotman, Editor(s)

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