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Proceedings Paper

Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths
Author(s): Stephane Davy; Michel Spajer; Daniel A. Courjon; Carlo Coluzza; R. Generossi; Antonio Cricenti; C. Barchesi; J. Almeida; G. Faini
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Paper Abstract

This contribution presents an application of scanning near- field microscopy to the characterization of semi-conductors. We have studied the planar homogeneity of a Au/GaAs Schottky barrier using a local illumination by a nanosource with various wavelengths. One of the main results is the interface defaults revealed by the photocurrent mapping at (lambda) equals 1.33 micrometers .

Paper Details

Date Published: 17 September 1997
PDF: 6 pages
Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); doi: 10.1117/12.281198
Show Author Affiliations
Stephane Davy, Univ. de Franche-Comte (France)
Michel Spajer, Univ. de Franche-Comte (France)
Daniel A. Courjon, Univ. de Franche-Comte (France)
Carlo Coluzza, Univ. degli Studi di Roma La Sapienza (Italy)
R. Generossi, Istituto di Struttura della Materia (Italy)
Antonio Cricenti, Istituto di Struttura della Materia (Italy)
C. Barchesi, Istituto di Struttura della Materia (Italy)
J. Almeida, Swiss Federal Institute of Technology (Switzerland)
G. Faini, Lab. des Materiaux Macromoleculaires (France)

Published in SPIE Proceedings Vol. 3098:
Optical Inspection and Micromeasurements II
Christophe Gorecki, Editor(s)

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