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Proceedings Paper

Tunnel noise spectroscopy by reflection SNOM and STM
Author(s): Pavel Tomanek; Lubomir Grmela; Jitka Bruestlova; Pavel Dobis
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Paper Abstract

The 1/f noise is a general phenomenon on physical systems. In this paper low-frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called 'tunnel noise spectroscopy' permitting to localize a noise sources on the surface. Some applications of scanning tunnel microscopy and of reflection scanning near-field optical microscopy in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Paper Details

Date Published: 17 September 1997
PDF: 6 pages
Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); doi: 10.1117/12.281197
Show Author Affiliations
Pavel Tomanek, Technical Univ. of Brno (Czech Republic)
Lubomir Grmela, Technical Univ. of Brno (Czech Republic)
Jitka Bruestlova, Technical Univ. of Brno (Czech Republic)
Pavel Dobis, Technical Univ. of Brno (Czech Republic)


Published in SPIE Proceedings Vol. 3098:
Optical Inspection and Micromeasurements II
Christophe Gorecki, Editor(s)

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