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Proceedings Paper

Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals
Author(s): Slawomir Maksymilian Kaczmarek; Miroslaw Kwasny; Jaroslaw Kisielewski; Zbigniew Moroz; Andrej O. Matkovskii; Dmitry Yu. Sugak
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Paper Abstract

Gamma-induced transition of Ce4+ $ARLR Ce3+ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce3+ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce3+ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce3+ starting concentration.

Paper Details

Date Published: 14 July 1997
PDF: 4 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280752
Show Author Affiliations
Slawomir Maksymilian Kaczmarek, Military Univ. of Technology (Poland)
Miroslaw Kwasny, Military Univ. of Technology (Poland)
Jaroslaw Kisielewski, Institute of Electronic Materials Technology (Poland)
Zbigniew Moroz, Institute of Nuclear Problems (Poland)
Andrej O. Matkovskii, SRC Carat (Ukraine)
Dmitry Yu. Sugak, SRC Carat (Ukraine)


Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

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