Share Email Print
cover

Proceedings Paper

High-resolution PITS studies of deep-level defects in semi-insulating GaAs and InP
Author(s): Pawel Kaminski; Michal Pawlowski; Roman Kozlowski; Robert Cwirko; M. Palczewska
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Deep states in semi-insulating GaAs and InP are investigated by high resolution photo-induced transient spectroscopy (PITS). The results exemplify new potentialities of the improved PITS technique.

Paper Details

Date Published: 14 July 1997
PDF: 5 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280743
Show Author Affiliations
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
Michal Pawlowski, Military Univ. of Technology (Poland)
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)
Robert Cwirko, Military Univ. of Technology (Poland)
M. Palczewska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

© SPIE. Terms of Use
Back to Top