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Proceedings Paper

Electrical and optical studies of NTD GaAs crystals
Author(s): S. Strzelecka; Andrzej Hruban; M. Gladysz; E. Jurkiewicz Wegner; W. Orlowski; B. Surma; M. Piersa; A. Gladki; A. Mirowska
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Paper Abstract

The electrical properties and photoluminescence spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) have been investigated as function of starting material properties, irradiation dose and thermal to fast neutron fluence ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and form nonradiative recombination centers, which are stable up to 700 degrees Celsius.

Paper Details

Date Published: 14 July 1997
PDF: 4 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280742
Show Author Affiliations
S. Strzelecka, Institute of Electronic Materials Technology (Poland)
Andrzej Hruban, Institute of Electronic Materials Technology (Poland)
M. Gladysz, Institute of Electronic Materials Technology (Poland)
E. Jurkiewicz Wegner, Institute of Electronic Materials Technology (Poland)
W. Orlowski, Institute of Electronic Materials Technology (Poland)
B. Surma, Institute of Electronic Materials Technology (Poland)
M. Piersa, Institute of Electronic Materials Technology (Poland)
A. Gladki, Institute of Electronic Materials Technology (Poland)
A. Mirowska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

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