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Proceedings Paper

Investigation of As-precipitates in Si GaAs
Author(s): S. Strzelecka; Marta Pawlowska; Andrzej Hruban; M. Gladysz; E. Jurkiewicz Wegner; A. Gladki; W. Orlowski
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Paper Abstract

The influence of thermal annealing procedure on As- precipitates density and electrical properties was investigated. Undoped and Cr, V, O2, and In doped GaAs single crystals grown by liquid encapsulated Czochralski method were analyzed. As-precipitates were investigated by optical microscope with Nomarski contrast after AB solution etching (AB-EPD), by laser scattering tomography (LST), by cathodoluminescence (CL) and transmission electron microscope (TEM). Annealing processes for ingots and wafers were carried out in closed quartz ampules at different temperature, time and arsenic partial pressure. The influence of thermal annealing on As-precipitates density was observed depending on starting materials properties and process parameters. The best results on reduction of As-precipitates density and homogenization of electrical properties of the material were obtained by multiannealing procedure.

Paper Details

Date Published: 14 July 1997
PDF: 4 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280741
Show Author Affiliations
S. Strzelecka, Institute of Electronic Materials Technology (Poland)
Marta Pawlowska, Institute of Electronic Materials Technology (Poland)
Andrzej Hruban, Institute of Electronic Materials Technology (Poland)
M. Gladysz, Institute of Electronic Materials Technology (Poland)
E. Jurkiewicz Wegner, Institute of Electronic Materials Technology (Poland)
A. Gladki, Institute of Electronic Materials Technology (Poland)
W. Orlowski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization

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