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Proceedings Paper

Point defects in CdTe crystals, doped with amphoteric elements
Author(s): P. Fochouk; L. Yatsunyk; L. Shcherbak; O. Panchouk
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Paper Abstract

High-temperature measurements at 973(673)K of electron (hole) concentration in Ge-doped CdTe crystals were performed under partial Cd and Te pressure. The results are compared with point-defect concentrations, calculated by use of approximated or full electroneutrality condition. The importance of the doped crystal thermal prehistory is evidenced. It determines the Ge in Cd sites to Ge in Te ones ratio, thus influences the electrical and optical properties of the crystal.

Paper Details

Date Published: 14 July 1997
PDF: 3 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280733
Show Author Affiliations
P. Fochouk, State Univ. of Chernivtsi (Ukraine)
L. Yatsunyk, State Univ. of Chernivtsi (Ukraine)
L. Shcherbak, State Univ. of Chernivtsi (Ukraine)
O. Panchouk, State Univ. of Chernivtsi (Ukraine)


Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

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