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Proceedings Paper

Controlled thickness and dielectric constant titanium-doped SiO2 thin films on silicon by sol gel process
Author(s): H. L. Liu; S. S. Wang; Yan Zhou; Yee Loy Lam; Yuen Chuen Chan; Chan Hin Kam
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Paper Abstract

In this paper, we report the preparation of crack-free relatively thick SiO2-TiO2 thin films on silicon substrates using the sol-gel spin-coating method. The influence of the process parameters on the quality of the film, such as the solution condition, the spin-coating speed, the heat treatment temperature and time, have been studied. We found that the cracking of the film could be avoided by selecting the right sol composition ratios, adding PVA to the sold and properly controlling the heat treatment. Most importantly, we discovered that by polishing the edges of the film after the deposition of each single layer, the number of such layers that deposited without crack formation could be substantially increased. The refractive index profile and thickness of the film have been determined using prism coupling technique and the inverse WKB method. The refractive index was found to depend on the content of TiO2 as well as the heat treatment condition. Using an AFM, the surface morphology of the film was found to be good.

Paper Details

Date Published: 18 August 1997
PDF: 10 pages
Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280583
Show Author Affiliations
H. L. Liu, Nanyang Technological Univ. (Singapore)
S. S. Wang, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Chan Hin Kam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3184:
Microelectronic Packaging and Laser Processing
Yong Khim Swee; HongYu Zheng; Ray T. Chen, Editor(s)

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