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Proceedings Paper

Hydrogen ion cut technology combined with low-temperature direct bonding
Author(s): Robert W. Bower; Albert Li; Yong-Jian Chin
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Paper Abstract

In this work we have combined the hydrogen ion cut technology with low temperature direct bonding. Our work allows silicon on insulator (SOI) materials produced with process temperatures below 400 degrees C. Previous work with hydrogen ion cut and other methods of forming SOI have required temperatures greater than 1000 degrees C. The work in this paper thus creates the opportunity to use the hydrogen ion cut technique to create SOI with ow process temperatures.

Paper Details

Date Published: 18 August 1997
PDF: 3 pages
Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280579
Show Author Affiliations
Robert W. Bower, Univ. of California/Davis (United States)
Albert Li, Univ. of California/Davis (United States)
Yong-Jian Chin, Univ. of California/Davis (United States)


Published in SPIE Proceedings Vol. 3184:
Microelectronic Packaging and Laser Processing

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