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Proceedings Paper

Influence of laser deposition conditions on optical properties of silicon composite films
Author(s): Ivan Z. Indutnyi; E. B. Kaganovich; A. A. Kudryavtsev; E. G. Manoilov; George S. Svechnikov
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Paper Abstract

In this paper the main optical properties of Si nanocrystalline films prepared by pulse laser deposition of Si in N2 or He atmosphere were reviewed. Both reflectance and transmission spectra were measured in the range of 200-1200nm and were used for calculation of films optical constants. It has been shown that films have composite structure and contain Si nanocrystallites in SiOxNy matrix. Obtained visible photoluminescence of these films is related to quantum confinement in Si dots.

Paper Details

Date Published: 18 August 1997
PDF: 4 pages
Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280577
Show Author Affiliations
Ivan Z. Indutnyi, Institute of Semiconductor Physics (Ukraine)
E. B. Kaganovich, Institute of Semiconductor Physics (Ukraine)
A. A. Kudryavtsev, Institute of Semiconductor Physics (Ukraine)
E. G. Manoilov, Institute of Semiconductor Physics (Ukraine)
George S. Svechnikov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3184:
Microelectronic Packaging and Laser Processing
Yong Khim Swee; HongYu Zheng; Ray T. Chen, Editor(s)

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