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Proceedings Paper

Electroluminescent and photosensitive films prepared by DTC-CVD method
Author(s): Ludmila V. Zavyalova; George S. Svechnikov
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Paper Abstract

The original chemical vapor deposition (CVD) method used in fabrication A2B6 films, photodetectors and electro- luminescent emitters based on these films have been reported. The basic idea behind this method is thermal decomposition of dithiocarbamates (DTC). The proposed method does not require expensive materials and vacuum equipment. Moreover, the DTC-CVD method differs from the known CVD methods in source material delivery method, a low deposition temperature and a non-sealed reactor geometry. Both CdS and CdS1-xSex were obtained at temperature of 240- 280 degrees C and were activated directly in the grown process by Cu and In, or by annealing in mixture CdS: Cu, Cl. Photodetectors with absorption maxima at 500-750 nm have dark conductivity (sigma) D EQ 10-9 divided by 10-8 (Omega) -1 cm-1 and photoconductivity (sigma) ph equals 10-2 divided by 10-1 (Omega) -1 cm-1 at 200 lux. CdS films with thickness of 6 divided by 12 micrometers have been used as sandwich-type photoconductor detectors. Electroluminescence ZnS:Mn films prepared by DTC-CVD method at the substrate temperature of 200 DIV 300 degrees C without additional annealing have high luminance and luminous efficiency. Deposition at a law temperature makes it possible to use flexible polymer films or low cost glasses as substrates. Because the technique is rather simple and can be applied to obtain all types of thin film electroluminescence structure layers, we expect a low price of light sources based on these films.

Paper Details

Date Published: 18 August 1997
PDF: 7 pages
Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280561
Show Author Affiliations
Ludmila V. Zavyalova, Institute of Semiconductor Physics (Ukraine)
George S. Svechnikov, Singapore Polytechnic Univ. (Singapore)


Published in SPIE Proceedings Vol. 3184:
Microelectronic Packaging and Laser Processing

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