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Proceedings Paper

Optimization of BARC for nonplanar lithography by three-dimensional electromagnetic simulation
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Paper Abstract

A rigorous 3D nonplanar lithography simulator based on the integral equation approach to electromagnetic scattering is presented. The novelty of our approach lies in computing the scattering of each diffraction order separately during the initial setup phase of a simulation. Thereafter, the image intensity distributions for arbitrary mask geometries and defocus settings can be generated readily by appropriate superposition of the scattering results for the various diffraction orders. This capability allows one to simulate the effects of mask bias and defocus on a given BARC process efficiently.

Paper Details

Date Published: 14 August 1997
PDF: 13 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280555
Show Author Affiliations
Michael S. Yeung, Boston Univ. (United States)
Eytan Barouch, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

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