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Proceedings Paper

X-ray holography for VLSI using synthetic bilevel holograms
Author(s): Ronald E. Burge; Joachim N. Knauer; XiaoCong Yuan; Keith Powell
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Paper Abstract

The gains are pointed out of the potential replacement of the usual patterned transmission x-ray mask, in consideration of high-resolution proximity lithography for VLSI, by a diffraction element, or bilevel in-line hologram, to be projected under near-field conditions using synchrotron radiation. The hologram can be configured to correct for diffraction blurring due to projection, and be designed for pre-determined gaps between mask and wafer. The adjustment of experimental parameters can account for the waveguide effects that arise from mask elements with small features which are several hundred x-ray wavelengths thick.It is shown that the hologram, for projection printing at the 50nm feature size, at mask to wafer gaps of 10micrometers or greater, can be fabricated in a similar fashion to a high-resolution mask. The calculation of the hologram is computationally intensive, but a database of calculated features is envisaged.

Paper Details

Date Published: 14 August 1997
PDF: 12 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280549
Show Author Affiliations
Ronald E. Burge, Univ. of Cambridge and King's College London (United Kingdom)
Joachim N. Knauer, Univ. of Cambridge (United Kingdom)
XiaoCong Yuan, Univ. of Cambridge and King's College London (United Kingdom)
Keith Powell, King's College London (United Kingdom)


Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

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