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Proceedings Paper

Enhanced poly gate critical dimension control by using a SiOxNy ARC film
Author(s): Christopher Bencher; Tony Chu; Way Tat Tan; Gang Zou; Qunying Lin; Xu Yi; Wang Xu Dong; Ma Wei Wen
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Paper Abstract

In this study, a silicon oxy-nitride (SiOxNy) film deposited using the plasma enhanced chemical vapor deposition method has been developed and applied to improve poly-gate level resist line CD control. The desired optical properties of a SiOxNy anti-reflective coating (ARC) film and its optimum thickness were targeted by using a photolithography simulator. A process matrix study has led to the identification of an optimized SiOxNy film Dielectric ARC deposition process for i-line photolithography applications. Using the optimized SiOxNy film as the ARC, significant improvements, compared to the standard and top ARC techniques, have been achieved, including 5 times reduction in does to clear swing ratio and complete elimination of reflection induced photoresist notching and necking effects. Moreover, a 2500 wafer marathon run demonstrated that the refractive index, extinction coefficient and thickness of this film can be controlled to +/- 0.04, +/- 0.03 and +/- 12A, respectively and that the particle performance is excellent.

Paper Details

Date Published: 14 August 1997
PDF: 8 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280548
Show Author Affiliations
Christopher Bencher, Applied Materials Southeast Asia Pte. Ltd. (Singapore)
Tony Chu, Applied Materials Southeast Asia Pte. Ltd. (Singapore)
Way Tat Tan, Applied Materials Southeast Asia Pte. Ltd. (Singapore)
Gang Zou, Applied Materials Southeast Asia Pte. Ltd. (Singapore)
Qunying Lin, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Xu Yi, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wang Xu Dong, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ma Wei Wen, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

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