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Proceedings Paper

Advanced lithographic methods for 300-nm contact patterning over severe topography with i-line stepper
Author(s): Ida Chui Shan Ho; Alex Cheng; Siuhua Zhu
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Paper Abstract

This paper describes methods in defining sub-350nm contact holes with i-line stepper.Topography is a challenge to contact hole patterning in particular. Optical enhancement technique of halftone phase shift mask and off axis illumination are used. Experimental investigation of focus drilling method and application of organic bottom anti- reflective coating over topographical substrate are shown. The capability of i-line lithography at the 300nm regime of contact patterning over topographical substrate are described; and an acceptable process latitude is demonstrated.

Paper Details

Date Published: 14 August 1997
PDF: 11 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280539
Show Author Affiliations
Ida Chui Shan Ho, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Alex Cheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Siuhua Zhu, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

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