Share Email Print
cover

Proceedings Paper

Lithography using a compact plasma focus electron source
Author(s): Paul Choon Keat Lee; X. Feng; Guan Zhang; Mahe Liu; Sing Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A 1.6kJ compact plasma focus source operated in neon at 5 Hz was demonstrated as an electron source for microlithography. LIthographs were obtained by exposing the resist (PMMA) to an electron beam emitted from the plasma focus through an extraction channel in its anode with a mask in contact with the resist. The total energy in the beam was estimated from the lithographs to be > 20mJ per shot with electron energy > 20kV, and > 1J with electron energy approximately 10keV. The electron beam from this plasma focus is able to expose greater than 1 cm2 of resist placed 17cm from the source. Many samples with good resolution have ben obtained. An exposure can be mae on PMMA with only 10 shots over a period of 2 seconds. It is expected that with a higher sensitivity resist, an exposure can be made with a single shot.

Paper Details

Date Published: 14 August 1997
PDF: 9 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280538
Show Author Affiliations
Paul Choon Keat Lee, Nanyang Technological Univ. (Singapore)
X. Feng, Nanyang Technological Univ. (Singapore)
Guan Zhang, Nanyang Technological Univ. (Singapore)
Mahe Liu, Nanyang Technological Univ. (Singapore)
Sing Lee, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

© SPIE. Terms of Use
Back to Top