Share Email Print
cover

Proceedings Paper

Relationship between ruling quality and lithographic gap in proximity photolithography
Author(s): Yongqi Fu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The method of proximity photolithography is a practical and available way in the manufacture of gratin and radial encode. One of the most important factors of this way is lithographic gap. That is the distance from mask to surface of photoresist coated on ruled blank. The size of it affects the ruling quality directly, such as causing edge scattering. Because of the existing near-field Fresnel diffraction, it is impossible to obtain the ruling which is the same as the mask even if on the first focal plane of Fresnel. As it is very difficult to produce the exact parallel light in usual optical system, the actual image we get is not an ideal self-image. Therefore, a better position of the mask should be found in order to ensure the ruling quality. The relationship between image contrast and lithographic gap is deduced in the view of image contrast in this paper. According to the relation, rang of practical lithographic gap is obtained. Thus, a reliable basis is provided for selecting the best gap in actual photolithography.

Paper Details

Date Published: 14 August 1997
PDF: 6 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280530
Show Author Affiliations
Yongqi Fu, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

© SPIE. Terms of Use
Back to Top