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Proceedings Paper

Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures
Author(s): E. V. Bogdanov; Ole Per Hansen; Konstantin I. Kolokolov; V. N. Kravchenko; N. Ya. Minina; J. S. Olsen; A. M. Savin
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Paper Abstract

The influence of light illumination and high electric field pulses on the long-term relaxation effect in piezoresistivity which has been discovered recently in p- GaAs/Al0.5Ga0.5As heterostructures has ben investigated. Significant acceleration of relaxation processes has been observed under the carriers heating by different external sources. This means that these phenomena are mostly determined by nonequilibrium processes in electron system. At 4.2 K under high electric fields switching of the samples to long-term high-resistance state has ben also found.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280471
Show Author Affiliations
E. V. Bogdanov, M.V. Lomonosov Moscow State Univ. (Russia)
Ole Per Hansen, Univ. of Copenhagen (Denmark)
Konstantin I. Kolokolov, M.V. Lomonosov Moscow State Univ. (Russia)
V. N. Kravchenko, M.V. Lomonosov Moscow State Univ. (Russia)
N. Ya. Minina, M.V. Lomonosov Moscow State Univ. (Russia)
J. S. Olsen, Univ. of Copenhagen (Denmark)
A. M. Savin, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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