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Proceedings Paper

Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector
Author(s): Zhenghao Chen; Zhenyu Yuan; Jianwei Ma; Dafu Cui
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Paper Abstract

A new type of step quantum well IR detectors with electron Bragg reflectors in the barrier regions has be proposed. The Bragg reflector is consisted of special square well and help to form the highly localized quasibound states in the extended states above the barrier height. Using the transfer matrix method, the complex eigen-energies, corresponding eigen-wavefunctions, and oscillator strengths was calculated. Theoretical analyses indicate that this kind of structure has great facility to realize bicolor optical transitions and transport asymmetry of photocurrent.

Paper Details

Date Published: 26 August 1997
PDF: 8 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280469
Show Author Affiliations
Zhenghao Chen, Institute of Physics (China)
Zhenyu Yuan, Institute of Physics (China)
Jianwei Ma, Institute of Physics (China)
Dafu Cui, Institute of Physics (China)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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