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Proceedings Paper

Growth and properties of native oxides for IV-VI optoelectronic devices
Author(s): Nicolas N. Berchenko; A. I. Vinnikova; Alexander Yu. Nikiforov; E. A. Tretyakova; S. V. Fadyeev
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Paper Abstract

On the samples of lead-tin telluride the possibilities of native oxides application in IV-VI photodiodes technology were shown. It is demonstrated that usage of a thin chemical oxide as an intermediatory layer between metal and semiconductor improves the Schottky barrier properties while anodic oxide passivation raises thermal and temporal stability as well as lowers the scattering of parameters from element to element in multi-element linear arrays.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280467
Show Author Affiliations
Nicolas N. Berchenko, Lviv Polytechnic Univ. (Ukraine)
A. I. Vinnikova, Lviv Polytechnic Univ. (Ukraine)
Alexander Yu. Nikiforov, Lviv Polytechnic Univ. (Ukraine)
E. A. Tretyakova, Lviv Polytechnic Univ. (Ukraine)
S. V. Fadyeev, Lviv Polytechnic Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics

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