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Proceedings Paper

Ge vapor-phase doping of CdTe and Cd0.96Zn0.04Te crystals
Author(s): P. Feichuk; L. Shcherbak; I. Omanchukivska
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Paper Abstract

The diffusion and solubility of Ge in CdTe and Cd0.96 Zn0.04 Te crystals at near saturated cadmium vapor pressure at 838 - 1108 K has been studied by radiometric and optical methods The influence of thermal etching process on Ge diffusion rate are discussed. The result suggest that local stress field in II-VI crystals are the sites where migrating Ge had been concentrated in separate phase form.

Paper Details

Date Published: 26 August 1997
PDF: 8 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280464
Show Author Affiliations
P. Feichuk, Univ. of Chernivtsi (Ukraine)
L. Shcherbak, Univ. of Chernivtsi (Ukraine)
I. Omanchukivska, Univ. of Chernivtsi (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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