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Proceedings Paper

p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe
Author(s): Igor I. Izhnin; Aleksandr I. Izhnin; K. R. Kurbanov; Bogdan B. Prytuljak
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Paper Abstract

Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-CdxHg1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers that depended on initial hole concentration and irradiation dose has been created. It was shown that in the usual vacancy doped CdxHg1-xTe the electron concentration in n-layers well agrees with concentration of residual donors. For the especially doped samples the electron concentration was determined by the In donor impurities' concentration. The possibility of the n-p+ CdxHg1-xTe photodiode fabrication with optimum required carriers' concentration both in n- and p-regions has been demonstrated by ion beam milling of the especially doped samples.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280463
Show Author Affiliations
Igor I. Izhnin, Carat (Ukraine)
Aleksandr I. Izhnin, Carat (Ukraine)
K. R. Kurbanov, Pure Metals (Ukraine)
Bogdan B. Prytuljak, Carat (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics

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