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Proceedings Paper

Thermodynamic aspects of manufacturing of (Hg,Mn)Te/CdTe structures
Author(s): S. V. Kavertsev; Sergiy Mikhailovich Komirenko; L. V. Rashkovetskii; Alexander E. Belyaev
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Paper Abstract

The comparison of actual manganese concentration in (Hg,Mn)Te samples grown by liquid phase epitaxy on CdTe and Cd0.96Zn0.04Te substrates to values obtained from the phase diagram of Hg-Mn-Te system reveals considerable discrepancies. The thermodynamic analysis made in assumption that the manganese concentration in the melting is low strained solid phase and superolled liquid one, i.e. the crystallization process is affected by elastic strain in epitaxial layer caused by lattice mismatch between substrate and film. It is shown also that the model of complete association in liquid phase do not provide a good agreement with experimental data.

Paper Details

Date Published: 26 August 1997
PDF: 3 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280462
Show Author Affiliations
S. V. Kavertsev, Institute of Semiconductor Physics (Ukraine)
Sergiy Mikhailovich Komirenko, Institute of Semiconductor Physics (Ukraine)
L. V. Rashkovetskii, Institute of Semiconductor Physics (Ukraine)
Alexander E. Belyaev, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics

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