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Proceedings Paper

Quantum magnetotransport in 2D electron gas in InGaAs/InP heterostructures
Author(s): Balint Podor; I. G. Savel'ev; Gy. Kovacs; G. Remenyi; G. Gombos; A. M. Kreshchuk; S. V. Novikov
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Paper Abstract

Quantum magnetotransport measurements were performed on liquid phase epitaxially grown In0.35Ga0.47As/InP heterostructures at 4.2 K temperature in magnetic fields up to 22 Tesla. Measurements in tilted magnetic field, in conjunction with the analysis of the derivatives with respect to the magnetic field of the magnetoresistance curves, allowed the resolution of spin-splitting of the Landau levels up to N equals 3. The spin-splitting energy ESPIN was deduced for the half-filled Landau levels 0$ARDN, 1$ARUP, 1$ARDN, 2$ARUP, and 2$ARDN. The magnetic field dependence of the spin-splitting energy was interpreted using a simple model based on the exchange interaction of the electrons in the spin-splitted Landau levels, incorporating the disorder induced broadening of the Landau levels.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280461
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics (Hungary)
I. G. Savel'ev, A.F. Ioffe Physical-Technical Institute (Russia)
Gy. Kovacs, Eotvos Lorand Univ. (Hungary)
G. Remenyi, CNRS (France)
G. Gombos, Research Institute for Technical Physics (Hungary)
A. M. Kreshchuk, A.F. Ioffe Physical-Technical Institute (Russia)
S. V. Novikov, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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