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Proceedings Paper

Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions
Author(s): Rauf Kh. Akchurin; V. A. Zhegalin; T. V. Sakharova; S. V. Seregin
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Paper Abstract

The technique of InAs1-x-ySbxBiy/InSb heterostructures forming by LPE was developed to obtain semiconductor material with intrinsic absorption edge (gamma) > 8 micrometers at 77K. Smooth epilayers with x equals 0.88-0.97 and y equals 0.0016-0.0036 were grown on InSb(111)A substrates in 380 450 degrees C temperature range. Eg(77K) values, obtained from optical absorption spectra measurements, were found to decrease by 0.017-0.020 eV as compared to InAs1-xSbx with the same x. The possibilities of InAs1-x-ySbxBiy/InSb strained multilayer heterostructures as semiconductor material for long- wavelength applications have been analyzed. Results of our calculation demonstrate that the strain-induced energy band- gap shift in such structures enables the attainment of 0.07- 0.15 eV Eg values at 77K for 0.82 < x < 0.94 composition range. The obtaining of strained multilayer heterostructures with layer thickness 1-x-ySbxBiy/InSb1-yBiy/InSb multilayer heterostructures with epilayer thicknesses from 0.05 to 0.2 micrometers depending on growth conditions can be successfully obtained by LPE.

Paper Details

Date Published: 26 August 1997
PDF: 6 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280459
Show Author Affiliations
Rauf Kh. Akchurin, Moscow State Academy of Fine Chemical Technology (Russia)
V. A. Zhegalin, Moscow State Academy of Fine Chemical Technology (Russia)
T. V. Sakharova, Moscow State Academy of Fine Chemical Technology (Russia)
S. V. Seregin, Institute of Chemical Problems for Microelectronics (Russia)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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