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Proceedings Paper

Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties
Author(s): Elena P. Kopishinskaya; Peter E. Mozol'; I. M. Rarenko; Aleksandr I. Vlasenko
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Paper Abstract

We have carried out experimental investigation of spectral and temperature dependences of photoconductivity in n-type Hg1-xMnxTe and studied an influence of nanosecond pulses of ruby laser irradiation on such properties. It has been shown that irradiation of the samples with subthreshold energy densities does not cause a change of their photosensitivity and leads to the surface refining from impurity atoms and oxides. A laser treatment of the samples with energy densities E > Eth stimulates a rise of the defect number in the crystals that causes a change of the lifetime characteristics and photosensitivity lowering.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280455
Show Author Affiliations
Elena P. Kopishinskaya, Institute of Semiconductor Physics (Ukraine)
Peter E. Mozol', Institute of Semiconductor Physics (Ukraine)
I. M. Rarenko, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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