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Proceedings Paper

Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties
Author(s): Nicolai D. Savchenko; T. N. Shchurova; M. L. Trunov; A. Kondrat; V. Onopko
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Paper Abstract

The effect of the deposition rate, the substrate temperature, the annealing temperature, the laser and high energy electron irradiation on the mechanical stresses for the heterostructure obtained by thermal evaporation of Ge33As12Se55 film onto the crystalline p-Si has been investigated. It has been found that the mechanical stresses are the tensile ones and are in the range between 1 X 107 Pa and 1 X 108 Pa dependent on the film structure related to the deposition technique. Special features of the stresses changes at the deposition rate 6.0 nm/s and the substrate and the annealing temperatures 450 K has been revealed. The results have been interpreted in terms of the topological structural transition associated with the transition from the 2D structure to the 3D one.

Paper Details

Date Published: 26 August 1997
PDF: 6 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280453
Show Author Affiliations
Nicolai D. Savchenko, Uzhgorod State Univ. (Ukraine)
T. N. Shchurova, Uzhgorod State Univ. (Ukraine)
M. L. Trunov, Uzhgorod State Univ. (Ukraine)
A. Kondrat, Uzhgorod State Univ. (Ukraine)
V. Onopko, Uzhgorod State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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