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Proceedings Paper

Irreversible gigantic modification of semiconductor optical properties
Author(s): Alexander M. Kamuz; Pavel F. Oleksenko; T. A. Dyachenko
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Paper Abstract

The irreversible gigantic modification (IGM) occurs in semiconductors under simultaneous action of strongly polar liquid, acceptors dissolved in it, and optical radiation in the region of fundamental absorption. The IGM phenomenon is found by the authors in the III-V and II-VI compound semiconductors. During the IGM process the reflection and transmission coefficients are gradually varying in a modified near-surface semiconductor region. This enables to reduce controllably the real part of the complex refractive index in a near-surface semiconductor region, vary its chemical composition and the luminescence spectrum. After IGM the modified semiconductor with the velocity of 100 ms/mm. Increasing a distance between the controlling and controlled beams enables to implement a time delay between signal. The time delay up to 1.7 seconds has been achieved experimentally. We have used the IGM phenomenon to fabricate elements and devices of the integrated semiconductor optics. The IGM phenomenon enables to make antireflective optical elements.

Paper Details

Date Published: 26 August 1997
PDF: 6 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280452
Show Author Affiliations
Alexander M. Kamuz, Institute of Semiconductor Physics (Ukraine)
Pavel F. Oleksenko, Institute of Semiconductor Physics (Ukraine)
T. A. Dyachenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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