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Proceedings Paper

Investigations of transport phenomena in narrow-gap semiconductors
Author(s): George V. Lashkarev; M. V. Radchenko; V. V. Asotskiy; V. M. Frasunyak
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Paper Abstract

Electrical and magnetic investigations of HgTe with substitution of Cr and Cd0.2Hg0.8Te substituted by In are represented. Common behavior and difference is of action of these impurities on AIIBVI properties are shown. Extraordinary temperature dependence of thermoelectromotive force of HgTe:Cr is observed.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280449
Show Author Affiliations
George V. Lashkarev, Institute for Problems of Materials Science (Ukraine)
M. V. Radchenko, Institute for Problems of Materials Science (Ukraine)
V. V. Asotskiy, Institute for Problems of Materials Science (Ukraine)
V. M. Frasunyak, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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