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Proceedings Paper

Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors
Author(s): Volodymyr G. Savitsky; Bogdan S. Sokolovsky; Alexey V. Nemolovsky
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Paper Abstract

Characteristic features of the photoelectric amplification of graded-band-gap photoresistors which energy gap is increased linearly towards contacts are considered theoretically. It has been shown that nonmonotonic field dependence of the photoelectric amplification coefficient is realized in such photoresistors. Maximum value the photoelectric amplification coefficient being increased under the increase of energy gap gradient can be much greater than that of the homogeneous samples.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280448
Show Author Affiliations
Volodymyr G. Savitsky, I. Franko State Univ. of Lviv (Ukraine)
Bogdan S. Sokolovsky, I. Franko State Univ. of Lviv (Ukraine)
Alexey V. Nemolovsky, I. Franko State Univ. of Lviv (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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