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Proceedings Paper

Peculiarities of radiative recombination in Vanadium-doped CdTe crystals
Author(s): Alexander E. Belyaev; V. Yu. Ivanov; Sergiy Mikhailovich Komirenko; S. V. Kavertsev; L. A. Mischenko
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Paper Abstract

Optical and photoelectrical properties of both as-grown and annealed at 600 C during five hours CdTe:V crystals with Vanadium concentration in liquid phase of 5 X 1018cm-3 and 5 X19cm-3 were investigated. Presented data are based on investigation of photoluminescence (PL) spectra and spectral dependence of photoconductivity (PC). The effect of PL band kindling has been detected with maximum at 1.55 eV in crystals of Nv equals 5 X 1018 cm-3 doping concentration. The effect is accompanied by dramatic increase of crystals' resistance. As mechanism responsible for formation of high- resistance state the self-compensation of the impurities with creation of complexes that include isolated Vanadium and vacancy in the metal sublattice is considered.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280443
Show Author Affiliations
Alexander E. Belyaev, Institute of Semiconductor Physics (Ukraine)
V. Yu. Ivanov, Institute of Semiconductor Physics (Ukraine)
Sergiy Mikhailovich Komirenko, Institute of Semiconductor Physics (Ukraine)
S. V. Kavertsev, Institute of Semiconductor Physics (Ukraine)
L. A. Mischenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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