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Proceedings Paper

Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China
Author(s): Junhao Chu; Kun Liu; Young Chang; Pulin Liu; Biao Li; Shaoling Guo; Minghui Chen; Dingyuan Tang
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Paper Abstract

The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless nd nondestructive methods such as the IR, far-IR and millimeter wave measurements. This paper reports a portion of these new results.

Paper Details

Date Published: 26 August 1997
PDF: 9 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280439
Show Author Affiliations
Junhao Chu, Shanghai Institute of Technical Physics (China)
Kun Liu, Shanghai Institute of Technical Physics (China)
Young Chang, Shanghai Institute of Technical Physics (China)
Pulin Liu, Shanghai Institute of Technical Physics (China)
Biao Li, Shanghai Institute of Technical Physics (China)
Shaoling Guo, Shanghai Institute of Technical Physics (China)
Minghui Chen, Shanghai Institute of Technical Physics (China)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics

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