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Proceedings Paper

Energy spectrum of irradiation-induced defects in Pb1-xSnxTe
Author(s): Evgenii P. Skipetrov; Alexander M. Mousalitin; A. N. Nekrasova; A. V. Ryazanov
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Paper Abstract

The effect of high hydrostatic pressure on the galvanomagnetic properties of n- and p-Pb1-xSnxTe irradiated with electrons has been investigated. It has been shown that independently of the initial type of conductivity under the electron irradiation the Fermi level in Pb1-xSnxTe alloys reaches the limiting position and 'soft' pinning of the Fermi level in the valence band occurs. In all irradiated alloys the reconstruction of the energy spectrum under pressure leads to the increase of the hole concentration due to the redistribution of electrons between the valence band and the radiation-induced resonant states situated slightly below the valence band top. On the basis of the obtained experimental results the model of the energy spectrum of irradiated Pb1-xSnxTe alloys has been discussed. In terms of this model by comparing the experimental and theoretical fluence and pressure dependences of the free carriers concentration the main parameters of irradiation- induced defect states in Pb1-xSnxTe alloys were determined.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280438
Show Author Affiliations
Evgenii P. Skipetrov, M. V. Lomonosov Moscow State Univ. (Russia)
Alexander M. Mousalitin, M. V. Lomonosov Moscow State Univ. (Russia)
A. N. Nekrasova, M. V. Lomonosov Moscow State Univ. (Russia)
A. V. Ryazanov, M. V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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