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Proceedings Paper

Low-dimensional Si structures prepared by laser deposition
Author(s): Sergey V. Svechnikov; E. B. Kaganovich; E. G. Manoilov; S. P. Dikiy
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Paper Abstract

One of possible attempt to get light emission out of silicon is to use low dimensional Si structures. There we report about nanocrystalline composite Si films with visible photoluminescence prepared by reactive pulsed laser deposition. We have examined the effects of nanocrystallite size and matrix composition on the optical properties. As a result, the structure of these composite films and superlattice based thereon have the ability of controlling the quantum size and consequently their optoelectronic properties.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280433
Show Author Affiliations
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
E. B. Kaganovich, Institute of Semiconductor Physics (Ukraine)
E. G. Manoilov, Institute of Semiconductor Physics (Ukraine)
S. P. Dikiy, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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